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該RA07H3340M是7-watt RF的MOSFET放大器模塊for 12.5-volt便攜式/ 330-運作，在移動無線電400-MHz范圍.電池可以直接連接到漏極增強型MOSFET晶體管.如果沒有門電壓(VGG進排水=0V),只是一個很小的泄漏電流與輸入信號衰減的RF高達60 dB.輸出功率作為柵極和漏極電壓增加電流增加.隨著柵極電壓約2.5V（最低），輸出功率和漏目前的大幅增加.額定輸出功率變在3V（典型值）和3.5V（最大）提供.在VGG=3.5V,的典型柵極電流1 mA.該模塊是專為非線性調頻調制，但可能也可用于線性調制通過設置靜態漏電流隨柵極電壓和輸出功率控制輸入功率。
特征
•增強型MOSFET晶體管IDD≅0@ VDD=12.5V, VGG=0V
•寬帶頻率范圍：330-400MHz
•低功耗控制電流IGG=1mA (typ)在VGG=3.5V
•模塊尺寸：30 x 10 x 5.4 mm
•線性操作有可能通過設置靜態漏電流同門電壓和輸出功率的控制輸入功率。
RA07H3340M： Silicon RF Power Semiconductors RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET TransistorsVDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• hT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
• RA07H3340M-101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER：RA07H3340M-101
SUPPLY FORM：Antistatic tray,50 modules/tray
深圳浩時健電子有限公司是國內三菱射頻電子元器件專業供應商，三菱射頻產品廣泛應用用于移動通信基站、直放站、衛星通信、有線電視、雷達、無線本地環等領域。積極向國內生產和科研單位推薦新產品：日本三菱公司生產的系列射頻功率放大模塊、系列射頻場效應三極管。多年以來已為國內眾多的生產廠家、科研院所、大專院校、國家重要單位維修部門的生產、維修、研制開發新品、教學實驗等提供了準確、快捷、方便的配套供貨服務。在經營運作上,我公司批發、零售兼營，可向用戶長期保證貨源，并保證供貨品種的技術指標滿足相關的國際檢測標準。
三菱（MITSUBISHI）:HF/VHF/UHF/900MHz（分立MOSFET管）
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三菱（MITSUBISHI）：（射頻功率放大模塊）
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